 技術摘要： |
本揭示敘述半導體裝置例如電晶體，其包括位於基板上方、作為通道區之薄的半導金屬層。此薄的半導金屬層具有能隙開口並表現出半導體性質。所述的半導體裝置包括源極/汲極區，此源極/汲極區包括較厚的半導金屬層，位於作為通道區之薄的半導金屬層上方。此較厚的半導金屬層表現出金屬性質。用於源極/汲極區的半導金屬包括相同於或相似於通道區的半導金屬的半導金屬材料。
The current disclosure describes semiconductor devices, e.g., transistors including a thin semimetal layer as a channel region over a substrate, which includes bandgap opening and exhibits semiconductor properties. Described semiconductor devices include source/drain regions that include a thicker semimetal layer over the thin semimetal layer serving as the channel region, this thicker semimetal layer exhibiting metal properties. The semimetal used for the source/drain regions include a same or similar semimetal material as the semimetal of the channel region.
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