‧ 專利名稱
‧ 專利證書號	US10748774B2 US11114301B2
‧ 專利權人	國立臺灣大學
‧ 專利國家     (申請日)	美國 (2018/11/14) 中國 (2018/11/29) 中華民國 (2018/11/29) 美國 (2020/08/03)
‧ 單位	台積電-臺灣大學聯合研發中心
‧ 發明人 / PI	楊博宇,林延勳,萬獻文,林耕雍,郭瑞年,洪銘輝,
‧ 簡歷 / Experience

A method for manufacturing a semiconductor device includes forming a first high-k dielectric layer on a semiconductor substrate; forming a second high-k dielectric layer on the first high-k dielectric layer, in which the second high-k dielectric layer includes a material different from a material of the first high-k dielectric layer; annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused; and forming a gate electrode over the second high-k dielectric layer.

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