微型注模技術和製作有機薄膜電晶體的方法
刊登日期:2014/05/21
  ‧ 專利名稱 微型注模技術和製作有機薄膜電晶體的方法
  ‧ 專利證書號 I323039
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2006/10/24)
美國 (2007/10/24)
 
  ‧ 發明人/PI 楊明樺,莊孟哲,林暐翔,陳宇璿,許峻豪,蕭文欣,李世光,吳文中,
  ‧ 單位 工程科學及海洋工程學系
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
一種微型注模技術製作有機薄膜電晶體之方法,包括以下步驟:提供一母模與一可撓性基板,其中母模第一個主要面上有微結構定義源/汲極之圖案,母模第二個主要面上至少有一個開孔,可灌注溶液材料之用;首先形成一黏著層於可撓性基板上,並將母模與可撓性基板接合;從母模開孔注入源極/汲極溶液材料,固化處理後形成源極/汲極,再移開母模;形成一半導體層於源極/汲極之上;形成一絕緣層於半導體及源極/汲極之上;形成一閘極於絕緣層之上;形成一保護層。

A method for fabricating organic thin-film transistors is disclosed. The method includes the steps of: providing a mold and a flexible substrate, wherein the mold comprises microstructures for defining source/drain electrode patterns on the substrate and at least an opening for feeding a solution material; forming an adhesive layer on the flexible substrate such that the mold is attached to the flexible substrate via the adhesive layer; feeding a solution material for forming source/drain electrodes via the opening of the mold and curing the solution material so as to form source/drain electrodes; removing the mold and forming a semiconductor layer on the source/drain electrodes; forming an insulator layer on the semiconductor layer and on the source/drain electrodes; forming a gate electrode on the insulator layer; and forming a protective layer for covering the organic thin-film transistor. The channel length of the thin film transistor is determined by the resolution of the microstructures of the mold.




聯繫方式 / Contact:
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU
Email:ordiac@ntu.edu.tw 電話/Tel:02-3366-9945