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 微型注模技術和製作有機薄膜電晶體的方法
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刊登日期：2014/05/21 |
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| ‧ 專利名稱 |
微型注模技術和製作有機薄膜電晶體的方法 |
| ‧ 專利證書號 |
I323039
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
中華民國 (2006/10/24)
美國 (2007/10/24)
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| ‧ 發明人/PI |
楊明樺,莊孟哲,林暐翔,陳宇璿,許峻豪,蕭文欣,李世光,吳文中,
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| ‧ 單位 |
工程科學及海洋工程學系
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
一種微型注模技術製作有機薄膜電晶體之方法，包括以下步驟：提供一母模與一可撓性基板，其中母模第一個主要面上有微結構定義源/汲極之圖案，母模第二個主要面上至少有一個開孔，可灌注溶液材料之用；首先形成一黏著層於可撓性基板上，並將母模與可撓性基板接合；從母模開孔注入源極/汲極溶液材料，固化處理後形成源極/汲極，再移開母模；形成一半導體層於源極/汲極之上；形成一絕緣層於半導體及源極/汲極之上；形成一閘極於絕緣層之上；形成一保護層。
A method for fabricating organic thin-film transistors is disclosed. The method includes the steps of: providing a mold and a flexible substrate, wherein the mold comprises microstructures for defining source/drain electrode patterns on the substrate and at least an opening for feeding a solution material; forming an adhesive layer on the flexible substrate such that the mold is attached to the flexible substrate via the adhesive layer; feeding a solution material for forming source/drain electrodes via the opening of the mold and curing the solution material so as to form source/drain electrodes; removing the mold and forming a semiconductor layer on the source/drain electrodes; forming an insulator layer on the semiconductor layer and on the source/drain electrodes; forming a gate electrode on the insulator layer; and forming a protective layer for covering the organic thin-film transistor. The channel length of the thin film transistor is determined by the resolution of the microstructures of the mold.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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