Transfer-free, direct growth of graphene by atomic layer deposition on oxide surface 刊登日期:2017/11/30
  ‧ 專利名稱
  ‧ 專利證書號 10,290,808
10,756,271
10,461,254
9,923,142 B2
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
美國 (2016/05/31)
美國 (2018/03/19)
美國 (2019/05/10)
美國 (2019/10/28)
  ‧ 發明人 陳敏璋, 謝忠諺,
 
技術摘要:
A method and structure for providing uniform, large-area graphene by way of a transfer-free, direct-growth process. In some embodiments, a SAM is used as a carbon source for direct graphene synthesis on a substrate. For example, a SAM is formed on an insulating surface, and a metal layer is formed over the SAM. The metal layer may serve as a catalytic metal, whereby the SAM is converted to graphene following an annealing process. The SAM is deposited using a VPD process (e.g., an ALD process and/or an MLD process). In some embodiments, a CNT having a controlled diameter may be formed on the surface of a nanorod by appropriately tuning the geometry of the nanorod. Additionally, in some embodiments, a curved graphene transistor may be formed over a curved oxide surface, thereby providing a band gap in a channel region of the graphene transistor.


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