 技術摘要： |
場效電晶體(field effect transistor,FET)包含閘極介電層、形成於閘極介電層上的二維通道層以及閘極電極。二維通道層包含主體區(body region)，其具有第一側邊與相對於第一側邊的第二側邊，主體區為場效電晶體的通道。二維通道層更包含每個從主體區的第一側邊突出的第一指區域與每個從主體區的第二側邊突出的第二指區域。源極電極覆蓋第一指區域，而汲極電極覆蓋第二指區域。
A field effect transistor (FET) includes a gate dielectric layer, a two-dimensional (2D) channel layer formed on the gate dielectric layer and a gate electrode. The 2D channel layer includes a body region having a first side and a second side opposite to the first side, the body region being a channel of the FET. The 2D channel layer further includes first finger regions each protruding from the first side of the body region and second finger regions each protruding from the second side of the body region. A source electrode covers the first finger regions, and a drain electrode covers the second finger regions.
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