 技術摘要 / Our Technology： |
一種應用聲子輔助光放大技術之半導體雷射元件及其製作方法，乃使用導電層於半導體矽基板之上，以電流流通方式進行矽之電激發光，更藉由二氧化矽奈米粒子於導電層與半導體矽基板之間，來形成金屬氧化物半導體接面，並促成載子侷限，使得聲子輔助發光機制得以增強，藉以提高矽的電激發光效率，達到激光的效應。
This invention reveals a semiconductor laser device through the application of phonon-assisted light amplification technique, and its manufacturing method. Firstly, it forms the conductive layer upon the semiconductor silicon substrate. Further, through the current-flowing manner, it performs electroluminescent (EL) light emitting. Furthermore, using of silicon dioxide nano-particles between the conduction layer and the semiconductor silicon substrate, it forms metal-oxide semiconductor junction to achieve carrier confinement. It Moreover, it enhances the phonon-assisted light-emitting mechanism. Eventually, it improves the electroluminescent efficiency of silicon, and achieves the effect of lasing.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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專利行銷平台