 技術摘要 / Our Technology： |
一種具有屏蔽效應的缺陷接地結構,包括一介電層、一缺陷金屬層、一接地金屬層以及至少一導電蕈狀結構。缺陷金屬層配置介電層中,且具有一線形開口。另外,導電蕈狀結構配置於缺陷金屬層與接地金屬層之間,並沿線形開口之延伸方向週期性地排列。其中導電蕈狀結構包括一蕈傘部與一蕈柄部。蕈傘部平行缺陷金屬層並與缺陷金屬層相距一距離,蕈傘部於缺陷金屬層上的投影區域涵蓋一段對應蕈傘部的線形開口。蕈柄部連接蕈傘部與接地金屬層。
A defected ground structure with shielding effect is provided. The structure includes a dielectric layer, a defected metal layer, a grounded metal layer and at least a conductive mushroom-like structure. The defected metal layer has a line-shaped opening and is disposed in the dielectric layer. The conductive mushroom-like structure is disposed between the defected metal layer and the grounded metal layer and is arranged along an extending direction of the line-shaped opening periodically. The conductive mushroom-like structure includes a fungating part and a stipe part. The fungating part is parallel to the defected metal layer and a distance is maintained away from the defected metal layer. The projection area of the fungating part on the defected metal layer covers a length of the line-shaped opening corresponding to the fungating part. The stipe part connects the fungating part and the grounded metal layer.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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專利行銷平台