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 半導體技術節點研究(The demonstration of Ultra-High Dielectric Constant with the propelling of the magnetic complex thin film for the application in CMOS devices) |
刊登日期：2015/10/08 |
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| ‧ 專利名稱 |
半導體技術節點研究(The demonstration of Ultra-High Dielectric Constant with the propelling of the magnetic complex thin film for the application in CMOS devices) |
| ‧ 專利證書號 |
US9614079B2
10,158,014
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2014/04/04)
美國 (2017/04/03)
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| ‧ 發明人 |
廖洺漢, |
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| 技術摘要： |
An integrated circuit structure includes a semiconductor substrate, and a gate stack over the semiconductor substrate. The gate stack includes a high-k gate dielectric over the semiconductor substrate, and a magnetic compound over and in contact with the high-k gate dielectric. A source region and a drain region are on opposite sides of the gate stack. The gate stack, the source region, and the drain region are portions of a Metal-Oxide-Semiconductor (MOS) device.
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聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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