 技術摘要 / Our Technology： |
本發明利用氣態凝結並結合磊晶技術製作球形量子點元件的方法，係至少依序包含下列步驟：a.量子點成長步驟，以氣態凝結法於基板上成長量子點；b.量子點處理步驟，將a.步驟所得之已成長量子點樣品之基板，利用有機溶劑以超音波震洗器進行超音波震盪處理；與C.磊晶層覆蓋步驟，以磊晶技術將磊晶層覆蓋於經步驟b.處理後之量子點樣品上，藉由上述步驟可製作完全球形化之量子點元件，克服一般的磊晶成長量子點方法不易達到完全球形化之缺點。
A method of fabricating a device with spherical quantum dots by a combination of gas condensation and an epitaxial technique includes the following steps: (a) a quantum dots growth step, when the quantum dots are grown on the substrate by a gas condensation method; (b) a quantum dots processing step, when an ultrasonic cleaner is used with an organic solvent to vibrate the substrate in which quantum dots have been grown in step (a), or the substrate in which quantum dots have been grown in step (a) is thermally annealed at a high temperature to obtain a thin layer of quantum dots; and (c) an epitaxial layer cover step, when an epitaxial layer is covered over the quantum dots processed by step (b) by an epitaxial technique. By virtue of the above processes, a device with completely spherical quantum dots is obtained.
|
| 專利簡述 / Intellectual Properties： |
|
| |
聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
|
| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
|
|
| |
|
專利行銷平台