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 Narrow tube FET structure for super short channel control
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刊登日期：2016/01/07 |
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| ‧ 專利名稱 |
Narrow tube FET structure for super short channel control |
| ‧ 專利證書號 |
CN 105280689 B
US 9,917,169 B2
11,043,569
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2014/07/02)
中國 (2014/09/17)
美國 (2018/02/27)
美國 (2019/10/28)
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| ‧ 發明人/PI |
廖洺漢,
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| ‧ 單位 |
機械工程學系
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
A semiconductor device and method of formation are provided. The semiconductor device includes a channel surrounding a dielectric tube and a gate surrounding the channel. The dielectric tube comprises a high dielectric constant material that has or conducts few to no carriers, such as electrons or holes. The presence of the dielectric tube confines carriers to the channel, which is in close proximity to the gate. The proximity of the channel, and the carriers therein, to the gate affords greater control to the gate over the carriers, thus allowing a length of the channel to be decreased while experiencing little to no short channel effects, such as current leakage through the channel.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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