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 High electron mobility transistors
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刊登日期：2019/04/03 |
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| ‧ 專利名稱 |
High electron mobility transistors |
| ‧ 專利證書號 |
10,269,923
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2017/09/13)
中華民國 (2017/10/18)
中國 (2017/10/19)
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| ‧ 發明人/PI |
陳敏璋,施奐宇,
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| ‧ 單位 |
台積電-臺灣大學聯合研發中心
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
In a method of manufacturing a high-electron mobility transistor (HEMT), a first Group III-V semiconductor layer is formed on a substrate. The first Group III-V semiconductor layer is patterned to form a fin and a recessed surface. A second Group III-V semiconductor layer is formed to cover a top surface and all side surfaces of the fin and the recessed surface. The second Group III-V semiconductor layer is formed by a plasma-enhanced atomic layer deposition, in which a plasma treatment is performed on every time an as-deposited mono-layer is formed.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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