窄頻紅外線光偵測器
刊登日期:2015/07/16
  ‧ 專利名稱 光偵測器
  ‧ 專利證書號 I512963
9112073
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2014/01/13)
美國 (2014/08/26)
 
  ‧ 發明人/PI 李嗣涔,陳鴻欣,陳世晏,
  ‧ 單位 電子工程學研究所
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
A photo detector is disclosed. The photo detector comprises a substrate, a flat metal layer, a dielectric layer, a patterned metal layer, and a semiconductor film. The flat metal layer is formed on the substrate. The dielectric layer is formed on the flat metal layer. The patterned metal layer is, formed on the dielectric layer. The patterned metal layer comprises a first interdigitated electrode and a second interdigitated electrode. The first interdigitated electrode is adjacent to the second interdigitated electrode. The semiconductor film is formed on the dielectric layer and covering the first interdigitated electrode and the second interdigitated electrode. When the semiconductor film receives an incident light, the flat metal layer and the patterned metal layer are operated in a localized surface plasmon mode or a waveguide mode for absorbing a certain narrow bandwidth radiation light of the incident light. Therefore, the electrical conductivity of the semiconductor film is changed and the optical energy absorbed by the photo detector is determined.



專利簡述 / Intellectual Properties:




 

聯繫方式 / Contact:
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU
Email:ordiac@ntu.edu.tw 電話/Tel:02-3366-9945