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 Enhancement of Dielectric Constant with Layered Oxide structure
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刊登日期：2020/08/18 |
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| ‧ 專利名稱 |
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| ‧ 專利證書號 |
10,748,774
US11114301B2
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2018/11/14)
中國 (2018/11/29)
中華民國 (2018/11/29)
美國 (2020/08/03)
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| ‧ 發明人/PI |
楊博宇,林延勳,萬獻文,林耕雍,郭瑞年,洪銘輝,
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| ‧ 單位 |
台積電-臺灣大學聯合研發中心
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
A method for manufacturing a semiconductor device includes forming a first high-k dielectric layer on a semiconductor substrate; forming a second high-k dielectric layer on the first high-k dielectric layer, in which the second high-k dielectric layer includes a material different from a material of the first high-k dielectric layer; annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused; and forming a gate electrode over the second high-k dielectric layer.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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