 技術摘要 / Our Technology： |
本發明實施例利用一氧化鋅(ZnO)微奈米柱陣列作為蝕刻遮罩，蝕刻形成氮化鎵(GaN)微奈米柱陣列。所形成氮化鎵微奈米柱的尺寸、位置、高度，將由氧化鋅微奈米柱的尺寸、位置、高度所決定。
An embodiment of this invention utilizes ZnO rods as the etching mask to etch a GaN layer arranged below, so that GaN rods are formed. The GaN rods have similar patterns as the ZnO rods. The pattern, size, position, and height of the GaN rods are respectively controlled by the pattern, size, position, and height of the ZnO rods.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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專利行銷平台