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半導體技術節點研究(The demonstration of Ultra-High Dielectric Constant with the propelling of the magnetic complex thin film for the application in CMOS devices)
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刊登日期:2015/10/08 |
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‧ 專利名稱 |
半導體技術節點研究(The demonstration of Ultra-High Dielectric Constant with the propelling of the magnetic complex thin film for the application in CMOS devices) |
‧ 專利證書號 |
US9614079B2 10,158,014
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‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2014/04/04) 美國 (2017/04/03)
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‧ 發明人/PI |
廖洺漢,
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‧ 單位 |
機械工程學系
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‧ 簡歷/Experience |
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技術摘要 / Our Technology: |
An integrated circuit structure includes a semiconductor substrate, and a gate stack over the semiconductor substrate. The gate stack includes a high-k gate dielectric over the semiconductor substrate, and a magnetic compound over and in contact with the high-k gate dielectric. A source region and a drain region are on opposite sides of the gate stack. The gate stack, the source region, and the drain region are portions of a Metal-Oxide-Semiconductor (MOS) device.
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專利簡述 / Intellectual Properties: |
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聯繫方式 / Contact: |
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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Email:ordiac@ntu.edu.tw |
電話/Tel:02-3366-9945 |
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