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 Self-focused ion beam lithography using dielectric lens |
刊登日期：2017/01/19 |
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| ‧ 專利名稱 |
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| ‧ 專利證書號 |
9,666,441
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2015/09/14)
中國 (2016/07/13)
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| ‧ 發明人 |
高振宏, 陳敏璋, 楊博軒, |
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| 技術摘要： |
A semiconductor device and method of manufacturing are presented in which features of reduced size are formed using an irradiated mask material. In an embodiment a mask material that has been irradiated with charged ions is utilized to focus a subsequent irradiation process. In another embodiment the mask material is irradiated in order to reshape the mask material and reduce the size of openings formed within the mask material. Through such processes the limits of photolithography may be circumvented and smaller feature sizes may be achieved.
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聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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